| 1. | Plasma cyro - etching of high aspect ratio silicon crystal structures
等离子体低温刻蚀单晶硅高深宽比结构 |
| 2. | Silicon crystal gas sensor
碳单晶气敏元件 |
| 3. | We can change the behavior of a pure silicon crystal by doping it
当纯矽的晶体和其它不纯物混杂在一起,矽的本质会改变。 |
| 4. | In computers , these diodes are primarily germanium or silicon crystals
在计算机中,这些二极管基本上是锗或硅晶体二极管。 |
| 5. | Testing method of resistivity for silicon crystals and silicon wafers with four - point probe
用四点探针法对硅晶体和硅片电阻率的测试方法 |
| 6. | Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy
用光致发光光谱法测定硅晶体中杂质浓度的试验方法 |
| 7. | Moore estimates have been produced to date , nearly every one has been built on the “ ground level , ” directly on the surface of silicon crystals
半导体工程师完成了一项令人意想不到的成就，就是让微晶片里的电晶体密度加倍成长，这在业界称为摩尔定律。 |
| 8. | P - type silicon crystal plates have been adopted in the text , which are formed mask sio2 by heat - oxygenation . and figures are diverted by normal light etching technology
本文采用p型单晶硅片，由热氧化形成sio _ 2掩膜层，标准光刻工艺进行图形转移，用koh溶液湿法刻蚀制作倒四棱锥腐蚀坑列阵。 |
| 9. | With the film thickness , which was determined using transmission electron microscopy ( tem ) , and the known material number density ( since the film is epitaxial on silicon , the number density is the same as in silicon crystals ) , this determines the ge concentration
由通过隧道电镜（ tem ）决定的膜厚和已知材料的密度（因为薄膜为硅上外延，密度与硅单晶相同） ，决定了锗的浓度。 |
| 10. | In czochralski silicon crystals ( czsi ) through fast neutron irradiation , formation and conversion of defects were investigated using fourier transform infrared spectroscopy ( ftir ) , positron annihilation technology ( pat ) and scanning electron microscope ( sem ) . the results showed that fast neutron irradiation induced large quantity of metastable defects which can be the capture centers of positron , positron annihilation average lifetime of samples increased with increasing of irradiation dosage . positron annihilation average lifetime of irradiation samples through dosage up to 1 1018 n . cm - 2 tended to constant
本文对直拉硅样品进行了不同剂量的快中子辐照，在硅中引入大量的亚稳态缺陷，研究这些亚稳态缺陷的形成，并在较宽的温度范围内对辐照样品进行了退火处理，研究退火后亚稳态缺陷的转化及同硅中氧的相互作用，应用傅立叶变换红外光谱技术( ftir ) 、正电子湮没技术( pat )和扫描电镜( sem )进行了测试。 |
